The present invention relates to a complementary metal-oxide semiconductor for performing logical functions. The complementary metal-oxide semiconductor comprises a wafer, an oxide layer, an interfacial layer and a plurality of metal terminals. The wafer is configured as a base for the complementary metal-oxide semiconductor. The oxide layer is deposited onto interfacial layer as an electrical insulator for the wafer. The interfacial layer is configured to bind the wafer with the oxide layer. The plurality of metal terminals is configured as a point of contact for source terminals, drain terminals, and gate input.