Displaying 1 - 6 of 6
Description
A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is…
Classification
|
Description
An microfiber-based integrated interferometer comprises a Sagnac loop formed at one end by bending a microfiber to form the loop and a pair of extensions stretching away from the loop thereof; a first optical coupling structure and a second optical…
Classification
|
Description
A signal generator which comprises: a frequency synthesizer of a phase-locked loop structure, comprising: a first oscillator for producing first signal of a reference frequency; a phase detector, connected to the first oscillator, for detecting…
Classification
|
Description
A method to detect and characterize at least one defect in a specimen using an apparatus comprises steps of: generate a plurality of wave signals on the specimen , by using an impact source , for the wave signals to propagate within the specimen;…
Classification
|
Description
The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN…
Classification
|
Description
The present invention relates to an improved system for probing bubble dynamics in a mixing vessel made of a transparent material. The system preferably comprises an optical recording means fixed by a bracket in the mixing vessel at a region at a…
Classification
|