A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is…

An microfiber-based integrated interferometer comprises a Sagnac loop formed at one end by bending a microfiber to form the loop and a pair of extensions stretching away from the loop thereof; a first optical coupling structure and a second optical…

A signal generator which comprises: a frequency synthesizer of a phase-locked loop structure, comprising: a first oscillator for producing first signal of a reference frequency; a phase detector, connected to the first oscillator, for detecting…

A method to detect and characterize at least one defect in a specimen using an apparatus comprises steps of: generate a plurality of wave signals on the specimen , by using an impact source , for the wave signals to propagate within the specimen;…

The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN…

The present invention relates to an improved system for probing bubble dynamics in a mixing vessel made of a transparent material. The system preferably comprises an optical recording means fixed by a bracket in the mixing vessel at a region at a…