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Method Of Growing M-Plane Gallium Nitride Film

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Reg. ID : 16739
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Huraian

A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is performed on the substrate with gaseous trimethylaluminium (Al(CH3)3) and ammonia (NH3) flow. After a desired growth time has elapsed, both gas sources are interrupted. After a desired recrystallization time has elapsed, a growth of a planar m-plane GaN file is performed with gaseous (Ga(CH3)3) and NH3. The proposed process discarded nitridation step and ammonia is inhibited during recrystallization. The surface morphology of m-plane (10-10) GaN has improved as captured by scanning electron microscope.

Contact Person/Inventor

Name Email Contact Phone
Um Centre Of Innovation And Enterprise (Umcie) umcie@um.edu.my 013-2250151 / 03-79677351

Intellectual Property

Type of IP Registration ID
1 Patent Filed UI 2021005173

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