Method for Producing A Non-Polar A-Plane Galllium Nitride (Gan) Thin Film on an R-Plane Sapphire Substrate
Potential Commercialised
violet
Reg. ID : 16933
Comments
Huraian
The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN layer during MOCVD by controlling V/III ratio, reaction temperature and flow rate of reactants, but not limited thereto. It was found that such method could provide non-polar a-plane GaN thin film on r-plane sapphire substrate with reduced lattice mismatch between each layer.
Contact Person/Inventor
Name | Contact Phone | |
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Um Centre Of Innovation And Enterprise (Umcie) | umcie@um.edu.my | 013-2250151 / 03-79677351 |
MRDCS
Award
Award Title | Award Achievement | Award Year Received |
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0 | 0 | 0 |
Komen