A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is performed on the substrate with gaseous trimethylaluminium (Al(CH3)3) and ammonia (NH3) flow. After a desired growth time has elapsed, both gas sources are interrupted. After a desired recrystallization time has elapsed, a growth of a planar m-plane GaN file is performed with gaseous (Ga(CH3)3) and NH3. The proposed process discarded nitridation step and ammonia is inhibited during recrystallization. The surface morphology of m-plane (10-10) GaN has improved as captured by scanning electron microscope.