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Ferroelectric polymer vertical organic field effect transistor for light emitting photovoltaic applications

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Reg. ID : 16714
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Huraian

A ferroelectric polymer organic vertical field effect transistor (VOFET) using ferroelectric dielectric as an insulator layer for application in photovoltaic and light emitting transistor and a method of integrating into VOFET are disclosed. The ferroelectric polymer on a substrate is pooled under high electric field. A network of diluted carbon nanotube is used as a grid and common source. The dilute channel length is determined by the thickness of the organic semiconducting layers. The pooled ferroelectric polymer effectively enhance the charge extraction and exciton dissociation in a photovoltaic transistor without the need applying external bias and if required external bias can be applied. The same can be applied for light emitting ferroelectric VOFET to enhance charge injection.

Contact Person/Inventor

Name Email Contact Phone
Um Centre Of Innovation And Enterprise (Umcie) umcie@um.edu.my 013-2250151 / 03-79677351

Intellectual Property

Type of IP Registration ID
1 Patent Filed PI 2020004241

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