A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is…

An microfiber-based integrated interferometer comprises a Sagnac loop formed at one end by bending a microfiber to form the loop and a pair of extensions stretching away from the loop thereof; a first optical coupling structure and a second optical…