A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is…

An microfiber-based integrated interferometer comprises a Sagnac loop formed at one end by bending a microfiber to form the loop and a pair of extensions stretching away from the loop thereof; a first optical coupling structure and a second optical…

Novel method and apparatus for profiling dna specimen using electronics is described. The method comprises: providing a metal layer; providing a dna specimen layer adjacent to metal layer to form schottky junction; providing forward bias voltage to…

A method to detect and characterize at least one defect in a specimen using an apparatus comprises steps of: generate a plurality of wave signals on the specimen , by using an impact source , for the wave signals to propagate within the specimen;…

The present invention relates to an improved system for probing bubble dynamics in a mixing vessel made of a transparent material. The system preferably comprises an optical recording means fixed by a bracket in the mixing vessel at a region at a…

A method of depositing a coating layer comprising gallium nitride on a substrate comprising the steps of: (a) providing the substance having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the…